OPTODEVICES Product Information Nov. 2014 USHIO OPTO SEMICONDUCTORS, INC.

OPTODEVICES
Product Information
Nov. 2014
USHIO OPTO SEMICONDUCTORS, INC.
UOS-GC001
Vol. 1
New Product
New
Product
HL40053MG
Applications
Direct Imaging
Bio & Medical
Measurement
Features
Optical output power: 400mW CW
Violet lasing: 398 - 410nm @ 400mW
Low operating current: 370mA typ @ 400mW
Low operating voltage: 4.9V max @ 400mW
Small package: 5.6mm
Multiple transverse mode
TE mode oscillation
Optical Output Power vs. Forward Current
Outtput Power Po (mW)
500
400
Tc=0℃
25℃
Unit :(mm)
300
30℃
Internal circuit
200
((1))
((3))
100
LD
0
0
200
400
Forward current If (mA)
600
(flange)
(2)
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HL40053MG specifications
Absolute Maximum Ratings (Tc=25 oC) Note1)
Note1) These values should not be exceeded under any conditions.
N t 2) Operating
Note2)
O
ti temperature
t
t
“Topr”
“T ” is
i defined
d fi d b
by C
Case ttemperature
t
“T
“Tc”.
” LD chip
hi temperature
t
t
is
i getting
tti
higher during operation due to its high current density and small package. Thus, without proper heat
dissipation less optical output power than specified one could be observed or it results to LD degradation.
It is advised that sufficient heat dissipation should be taken not to exceed the maximum operating
temperature during actual operation.
Optical and Electrical Characteristics (Tc=25 oC)
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New Product
New
Product
HL40041MG
Applications
Bio & Medical
Measurement
Features
Operation temperature: -10~+50℃
Optical output power: 150mW CW
Violet lasing: 404 nm typ @ 150mW
Low operating voltage: 5.0V max @ 150mW
Small package: 5.6mm
Multiple transverse mode
TE mode oscillation
Optical Output Power vs. Forward Current
Outp
put Power Po (mW)
150
10℃
50℃
0℃
100
Unit :(mm)
40℃
-10℃
25℃
Internal circuit
((1))
50
((3))
LD
0
0
100
200
300
(flange)
Forward current If (mA)
(2)
4
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HL40041MG specifications
Absolute Maximum Ratings (Tc=25 oC)
Optical and Electrical Characteristics (Tc=25 oC)
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Preliminary
Under Development
HL40033G
Applications
Direct Imaging for PCB
Industry
Display
Bio & Medical
Glass
Features
Emitting point
Optical output power: 1,000mW CW
Violet lasing: 405 nm typ.
Low operating current: 900mA typ.
Low operating voltage: 5.5V max
Package: 9.0mm
9 0mm
Multiple transverse mode
TE mode oscillation
Unit :(mm)
Internal circuit
((1))
((3))
LD
(flange)
(2)
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HL40033G specifications
Absolute Maximum Ratings (Tc=25 oC) Note1)
Note1) These values should not be exceeded under any conditions
conditions.
Note2) Operating temperature “Topr” is defined by Case temperature “Tc”. LD chip temperature is getting
higher during operation due to its high current density and small package. Thus, without proper heat
dissipation less optical output power than specified one could be observed or it results to LD degradation.
It is advised that sufficient heat dissipation should be taken not to exceed the maximum operating
temperature during actual operation.
Optical and Electrical Characteristics (Tc=25 oC)
* This specification may change without notice.
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N
New
P
Product
d t
New
Product
HL63193MG
Applications
Laser projector
Show Laser
Features
Optical output power: 700mW CW
Red light emitting: 638 nm typ @ 700mW
Low operating current: 820mA typ @ 700mW
Low operating voltage: 2.2V typ @ 700mW
Small package: 5.6mm
Multiple transverse mode
TM mode oscillation
Optical Output Power vs. Forward Current
700
Tc=0oC
25oC
Outp
put Power Po (mW)
600
40oC
500
Unit :(mm)
400
Internal circuit
300
(3)
(1)
200
100
LD
0
0
500
1000
Forward current If (mA)
1500
(flange)
(2)
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HL63193MG specifications
Absolute Maximum Ratings (Tc=25 oC) Note1)
Note1) These values should not be exceeded under any conditions.
Note2) Operating temperature “Topr” is defined by Case temperature “Tc”. LD chip temperature is getting
higher during operation due to its high current density and small package. Thus, without proper heat
dissipation less optical output power than specified one could be observed or it results to LD degradation.
It iis advised
d i d th
thatt sufficient
ffi i t h
heatt di
dissipation
i ti should
h ld be
b ttaken
k nott to
t exceed
d the
th maximum
i
operating
ti
temperature during actual operation.
Note3) Pulse condition: Pulse frequency : f ≧ 50Hz, duty ≦ 33%
Note4) The long term reliability such as lifetime is not guaranteed.
Optical and Electrical Characteristics (Tc=25 oC)
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Preliminary
HL63253MG
Under Development
Applications
Laser projector
Show Laser
Laser module
Features
Optical output power: 450mW CW
Red light emitting: 638nm typ @ 450mW
Low operating current: 600mA typ @ 450mW
Low operating voltage: 2.2V typ @ 450mW
Small package: 5.6mm
Multiple transverse mode
TM mode oscillation
Unit :(mm)
Internal circuit
(3)
(1)
LD
(flange)
(2)
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HL63253MG specifications
Absolute Maximum Ratings (Tc=25 oC) Note1)
Note1) These values should not be exceeded under any conditions.
Note2) Operating temperature “Topr”
Topr is defined by Case temperature “Tc”
Tc . LD chip temperature is getting
higher during operation due to its high current density and small package. Thus, without proper heat
dissipation less optical output power than specified one could be observed or it results to LD degradation.
It is advised that sufficient heat dissipation should be taken not to exceed the maximum operating
temperature during actual operation.
Optical and Electrical Characteristics (Tc=25 oC)
* This specification may change without notice.
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New Product
New
Product
HL63153AT
0.8+/-0.1
Applications
(0.25)
Pico projector
+0
3.8 -0.025
Features
0.9+/-0.2
Optical output power: 150mW CW
Red light emitting: 638 nm typ @ 150mW
Low operating current: 230mA typ @ 150mW
Low operating voltage: 2.7V typ @ 150mW
Small package: 3.8mm
Single transverse mode
TE mode oscillation
3.0
2.5
3- 0.3+/-0.1
Optical Output Power vs. Forward Current
150
Outtput Power Po (mW)
40oC
1
2
3
3
1
50oC
25oC
Tc=0oC
100
1.43+/-0.2
2
60oC
Unit :(mm)
Internal circuit
1
50
3
LD
0
0
100
200
300
Forward current If (mA)
400
2
(flange)
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HL63153AT specifications
Absolute Maximum Ratings (Tc=25 oC)
No
.
Items
Symbol
Ratings
Unit
1
Optical output power(1)
(-10 to +50oC)
Po(1)
150
mW
2
Optical output power(2)
(+50 to +60oC)
Po(2)
120
mW
3
LD reverse voltage
VR(LD)
2
V
4
Operating temperature
Topr
-10 ~ +60
℃
5
Storage temperature
Tstg
-40 ~ +85
℃
Note
Operating temperature “Topr” is defined by Case temperature “Tc”. High increase in temperature of LD chip itself is
expected during operation due to high current density and small package.
Thus, without proper heat dissipation, it is observed that no specific output power is achieved or it results to LD
degradation. It is advised that sufficient measure of heat dissipation should be taken so that LD’s maximum operating
temperature is not exceeded during actual operation
operation.
Optical and Electrical Characteristics (Tc=25 oC)
No.
Items
Symbol
Test condition
Min.
Typ.
Max.
Unit
1
Threshold current
Ith
-
-
75
100
mA
2
Operating current
Iop
Po=150mW
Po
150mW
-
230
300
mA
3
Operating voltage
Vop
Po=150mW
-
2.7
3.1
V
4
Beam divergence
parallel to the
junction

Po=150mW, FWHM
5
8.5
13
°
5
Beam divergence
perpendicular to
th junction
the
j
ti

Po=150mW, FWHM
13
18
23
°
6
Lasing wavelength
λp
Po=150mW
632
638
643
nm
Note
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Laser Diodes
Wavelength
Optical Power
Part Number
AC Connection
CC Connection
Other Connection
New
404nm
HL40041MG
150mW
New
HL40053MG(FN)
500mW
UD
405nm
1,000mW
HL40033G(FN)
633nm
100mW
HL63163DG(FN)
637nm
7mW
HL63102MG
120mW
HL63142DG
HL63101MG
HL6388MG(LN))
250mW
638nm
5mW
HL6312G
7mW
HL6354MG
HL6355MG
10mW
HL6320G
HL6319G
15mW
HL6322G
HL6321G
HL63603TG(FN)
120mW
New
HL63153AT(FN)
150mW
UD
AC Connection: LD: Anode common, PD: Cathode Common
BC Connection: LD: Cathode common, PD: Cathode Common
CC Connection: LD: Cathode common, PD: Anode Common
Under development
FN Connection: LD electrode is isolated from stem (common), PD: none
LN Connection: LD: Cathode common, PD: none
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Laser Diodes
Wavelength
Optical Power
Part Number
AC Connection
CC Connection
Other Connection
UD
638nm
HL63253MG(FN)
450mW
New
HL63193MG(FN)
700mW
12mW
HL6358MG
HL6359MG
12mW
HL6396MG
HL6395MG
25mW
HL6360MG
HL6361MG
25mW
HL6398MG
HL6397MG
35mW
HL6323MG
640nm
45mW
HL6362MG
HL6363MG
642nm
65mW
HL6364DG
HL6365DG
90mW
HL6366DG
HL6367DG
639nm
60 ℃ operation
60 ℃ operation
150mW
HL6385DG(LN)
648nm
150mW
HL65014DG(LN)
658nm
50mW*
HL6501MG
UD
AC Connection: LD: Anode common, PD: Cathode Common
BC Connection: LD: Cathode common, PD: Cathode Common
CC Connection: LD: Cathode common, PD: Anode Common
Under development
FN Connection: LD electrode is isolated from stem (common), PD: none
LN Connection: LD: Cathode common, PD: none
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Laser Diodes
Wavelength
Optical Power
Part Number
AC Connection
660nm
130mW
CC Connection
Other Connection
HL65051DG
HL6544FM(FN)
HL6545MG(LN)
300mW*
670nm
10mW
HL6714G
10mW
HL6748MG
15mW
HL6756MG
685nm
55mW
HL6750MG
690nm
35mW
HL6738MG
705nm
50mW
HL7002MG
HL7001MG
730nm
50mW
HL7302MG
HL7301MG
830nm
50mW
HL8337MG
HL8338MG
852nm(±10)
50mW
HL8340MG
HL8341MG
852nm(±4)
50mW
HL8342MG
HL8343MG
* Pulse optical power
AC Connection: LD: Anode common, PD: Cathode Common
BC Connection: LD: Cathode common, PD: Cathode Common
CC Connection: LD: Cathode common, PD: Anode Common
FN Connection: LD electrode is isolated from stem (common), PD: none
LN Connection: LD: Cathode common, PD: none
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Product Map
1000
HL40033G
Direct
Imaging
BioEngineering
500
Po : Maximum Ratings
pulse : pulse optical power
HL63193MG
Mass Production
New product
HL40053MG
Under development
HL63253MG
CTP
Display
300
HL6388MG
Optical O
Output Powe
er, Po(CW) (m
mW)
Bio-medical
HL6545MG
pulse
Sensor
200
HL63133DG
HL40041MG
HL63153AT
HL6385DG
HL63603TG
HL63142DG
HL63163DG
100
HL65014DG
HL65051DG
HL6544FM
HL6366DG
Medical
Sensor
Laser Aiming
Night Vision
HL6364DG
HL6750MG
50
HL7302MG
HL6362MG
HL6323MG
HL8342MG
HL7002MG
HL8340MG
HL8337MG
HL6738MG
HL6501MG
30
HL6360MG,HL6398MG
20
Marker
Leveler
Sensor
Multi beam LD for
high
g speed
p
p
printing
g
HL6756MG
HL6321G
Printer
HL6358MG,HL6396MG
10
HL6714G,HL6748MG
HL6319G
HL6354MG,HL63102MG
5
HL6312G
3
400- 415
633 - 645
650 - 665
670 - 690
700-730
830-850
Lasing Wavelength (nm)
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Product Line Up
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Product Line Up
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Part Numbering
Example: HL6354MG-A
HL 63 54 MG –A
(a) (b) (c) (d) (e)
(a) HL: UOS Laser Diode
(b) 63: Wavelength: (first 2-number of wavelength)
-63: 635nm, 65: 655~660nm, 67: 670~680nm,
70: 705nm, 73: 730nm, 83: 830nm (or 850nm)
(c) 54: Serial Number
(d) MG: Package Type (CAN package)
- G: 9.0mm, MG: 5.6mm(short can) , DG: 5.6mm (tall can),
TG: 3.8mm (short can)
(e) -A: RoHS compliant*
-A: RoHS compliant, <(Non; without –A)): No RoHS compliant>
* All of current available UOS are RoHS compliant.
CC Connection
Example: HL63101MG
HL 63 10 1 MG
(a) (b) (c) (d) (e)
3
1
1
PD
LD
2 (flange)
(a) HL: UOS Laser Diode
(b) 63: Wavelength: (first 2-number of wavelength)
40: 404nm, 63: 635nm, 65: 655~660nm, 67: 670~680nm,
70: 705nm, 73: 730nm, 83: 830nm (or 850nm)
(c) 10: Serial Number
(d) 1 : Internal Circuit (assigned either 1, 2, 3 or 4)
((e)) MG: Package
g Type
yp (CAN
(
package)
p
g )
- G: 9.0mm, MG: 5.6mm (short can), DG: 5.6mm (tall can),
TG: 3.8mm (short can), AT: 3.8mm (tall can)
* All products with new numbering are RoHS compliant.
(Therefore, No “-A”. )
AC Connection
2
1
3
PD
LD
2
(flange)
FN Connection
3
3
1
LD
2
(flange)
LN Connection
1
3
4
LD
2
(flange)
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Marking
For larger CAN packaged which diameter is 5.6mm or lager, 7~8 letters
combination of numerical and alphabetical are laser marked on cap.
1st line :
1st and
d 2nd columns
l
: Product
P d t identification
id tifi ti
code
d
if code is one character, 1st line is 3 characters.
3rd column : Year code
The year code is the last number of the produced
year. (ex; “3" means the year 2013)
th
4 column : Month code
The month code is marked with alphabet
character. (see Table-1)
2nd line :
5th to 8th column : UOS internal management code
For smaller CAN packaged which diameter is 3.8
3 8 mm
mm, 6 letters
combination of numerical and alphabetical are laser marked on cap.
1st line :
1st column and 2nd column : Product identification code
3rd column : Year code
The year code is the last number of the produced
year. (ex;
(
“1" means the
th year 2011)
2nd line :
4th column : Month code
The month code is marked with alphabet
character. (see Table-1)
1 2 3
4 5 6
5th to 6th column : UOS internal management code
table-1) Month code
Month
1
2
3
4
5
6
7
8
9
10 11
12
Code
A
B
C
D
E
F
G
H
J
K
M
L
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Testing Data
Testing data are available upon request with additional charge.
Ex. HL63142DG
Laser Diode
LASER DIODE
1pc/bag
90mm
40mm
TYPE No.
Serial No.
Test condition
Ith = 50.05 (mA) ,
SPECT = 637.7
637 7 (nm)
( ),
V.ANG = 18.2 (deg) ,
Po = 100 (mW)
Eta = 1.103 (mW/mA)
I = 0.343
Is
0 343 ((mA)
A) *
H.ANG =8.6 (deg)
(Attached data)
Optical power
Threshold current
Slope efficiency
Lasing wavelength
Monitor current*
Beam divergence(perpendicular)
Beam divergence(parallel)
・・・・・Po
・・・・・Ith
・・・・・Eta
・・・・・SPECT
・・・・・Is
・・・・・V.ANG
・・・・・H.ANG
* In case of providing built-in photodiode
90mm
96mm
44mm
10pcs/box
(Marking)
(M
ki )
UOS part number, quantity and mark
are indicated by bar code on a label.
(Note) The position of label and the format of label are subject to change without any notice.
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Information
Company
p y information
August. 06. 2014
USHIO INC. (TOKYO: 6925) (President and CEO: Shiro Sugata), announced today
that its wholly owned subsidiary USHIO OPTO SEMICONDUCTORS, INC.,
headquartered in Tokyo, has signed a demerger agreement with Oclaro Japan, Inc.
(President: Tadayuki Kanno), a wholly owned subsidiary of Oclaro, Inc. (CEO: Greg
Dougherty).
Through this agreement, USHIO OPTO SEMICONDUCTORS will acquire the LED,
red, violet and part of the infrared laser diode business from Oclaro Japan.
The acquired activity is primarily located in Komoro, Japan and includes approximately
80 employees.
* please refer to more detail at the following address.
http://www.ushio.co.jp/en/NEWS/ir/20140806_e.html
According to the closing of transaction, UOS started the business from October. 27. 2014
October. 27. 2014
USHIO OPTO SEMICONDUCTORS, INC. opened Website.
The following is Website address. It will be helpful your business.
http://www.ushio-optosemi.com
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Safety Considerations
Avoid direct eye
y exposure
p
to high
g p
power laser beams emitted from laser diodes. Even though
g laser light
g is
barely visible and/or invisible to the human eye, it can be quite harmful. As a result, avoid looking directly into
a laser diode or collimated beam along its optical axis when the diode is activated. Use a phosphor plate or
infrared sensitive camera to determine the optical path.
USHIO OPTO SEMICONDUCTORS, INC. certifies compliance with US Safety Regulations(21 CFR 1040.10)
on laser products as stipulated by the U.S. Department of Health and Human Services.
Notes regarding the document
1. USHIO OPTO SEMICONDUCTORS, INC.(UOS) neither warrants the information contained In this document
nor grants a license express or implied, to any of its, or any third party’s, patent, copyright, trademark, or other
intellectual property rights with respect to the information contained in this document.
UOS accepts no responsibility in connection with or related to any such third party’s right, including, but not
limited to, intellectual property rights, in connection with use of the information contained in this document.
2 UOS makes
2.
k every attempt
tt
t to
t ensure that
th t its
it products
d t are off high
hi h quality
lit and
d reliability.
li bilit
However, contact our sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily
injury, such as aerospace, nuclear power, combustion control, transportation, traffic, safety equipment or
medical equipment for life support applications.
3. Design your application so that the product is used within the ranges specified by UOS, particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. UOS bears no responsibility for failure or damage when used beyond the specified range.
Even within the specified range,
range please consider foreseeable failure rates or failure modes in semiconductor
devices and employ systemic measures, such as fail-safes, such that equipment incorporating these product
does not cause bodily injury, fire or other consequential damage due to operation of the UOS product.
4. This product is not designed to be radiation resistant.
5. Reproduction or duplication, in any form, in whole or in part, of this document without the
express written approval of UOS is strictly prohibited.
6. Please contact our sales office for any questions regarding this document or UOS products.
Cautions
1. Laser light, direct or indirect, can be harmful to the human body, especially to the eye.
2. The laser beam should be observed or adjusted through infrared cameras or similar equipments.
3. These products (excluding violet laser diodes) contain gallium arsenide (GaAs), which may seriously
endanger your health, even at very low doses. Please avoid any activities which may create GaAs powder
or gas
gas, such as disassembly or performing chemical experiments
experiments.
4. When disposing of product, please follow all applicable local laws and regulations.
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